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Updated: Aug 19, 2026

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
Published on: March 29, 2016
Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111)
Ing-Shouh Hwang1, Shih-Hsin Chang, Chung-Kai Fang
1Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of China. ishwang@phys.sinica.edu.tw
Abstract:
We have observed interesting H-atom adsorption induced atomic rearrangements of a Pb monolayer on the Si(111) with a scanning tunneling microscope. A hexagonal ringlike pattern is formed around the point defect. The interactions among nearby H-adsorbed defects can even produce interferencelike superstructures. Phase boundaries are found to either enhance or suppress the formation of the interference pattern. These phenomena are produced by an intricate interplay between electronic and atomic interactions as perturbed by the adsorbed hydrogen atoms.
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