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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Gate control of dynamic nuclear polarization in GaAs quantum wells

H Sanada1, S Matsuzaka, K Morita

  • 1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.

Physical Review Letters
|March 24, 2005
PubMed

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