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Related Experiment Videos

Nanowire single-electron memory.

Claes Thelander1, Henrik A Nilsson, Linus E Jensen

  • 1Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden. Claes.Thelander@ftf.lth.se

Nano Letters
|April 14, 2005
PubMed
Summary
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We demonstrate electron storage in semiconductor nanowires using metal nanoparticles as storage nodes. This novel approach shows a strong memory effect, enabling individual electron detection via tunneling at low temperatures.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Semiconductor nanowires offer unique electronic properties for nanoscale devices.
  • Quantum dots and tunnel junctions are key components in electron storage and detection.
  • Metal nanoparticles can serve as active elements in nanostructures.

Purpose of the Study:

  • To demonstrate electron storage within semiconductor nanowires.
  • To utilize metal nanoparticles as storage nodes in a nanowire-based system.
  • To investigate the memory effect and electron tunneling in this novel architecture.

Main Methods:

  • Epitaxial growth of InAs/InP semiconductor nanowires from gold (Au) nanoparticles.
  • Fabrication of multiple tunnel junctions (MTJs) within the nanowires.

Related Experiment Videos

  • Positioning of a second nanowire for electron tunneling detection.
  • Measurement of detector current at 4.2 K while sweeping writing voltage.

    • Main Results:

    • Successful storage of electrons in Au nanoparticle-seeded semiconductor nanowires.
    • Detection of individual electron tunneling through the MTJ at 4.2 K.
    • Observation of a significant memory effect in the detector current.

    Conclusions:

    • Au nanoparticles can function as effective storage nodes for electrons in semiconductor nanowires.
    • The developed nanowire MTJ structure exhibits a robust memory effect.
    • This work presents a promising platform for nanoscale electron memory devices.