Related Experiment Video
Updated: Aug 18, 2026
Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Electric-field assisted growth and self-assembly of intrinsic silicon nanowires
Ongi Englander1, Dane Christensen, Jongbaeg Kim
1Department of Mechanical Engineering and Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, California 94720, USA. ongi@me.berkeley.edu
Abstract:
Electric-field assisted growth and self-assembly of intrinsic silicon nanowires, in-situ, is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent MEMS structures. The response is expressed in the form of improved nanowire order, alignment, and organization while transcending a gap. This process provides a simple yet reliable method for enhanced control over intrinsic one-dimensional nanostructure placement and handling.
