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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Opposite Goos-Hänchen shifts for transverse-electric and transverse-magnetic beams at the interface associated with
Xiaolong Hu1, Yidong Huang, Wei Zhang
1Department of Electronic Engineering, Tsinghua University, Beijing 100084, China. huxiaolong99@mails.tsinghua.edu.cn
Abstract:
Goos-Hänchen shifts are investigated when total reflection occurs at the interfaces associated with single-negative materials (SNMs). A general rule for judging the direction of the Goos-Hänchen lateral shift concerning lossless media is obtained: Whether the lateral shift is positive or negative depends on the sign of micro1micro2 for TE-polarized incident beams and epsilon1epsilon2 for TM-polarized incident beams. It was theoretically demonstrated that, at the interface associated with SNMs, TE- and TM-polarized incident beams experience opposite Goos-Hänchen lateral shifts. An effective and simple approach to discriminating epsilon-negative material and micro-negative material is proposed.
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