Related Experiment Video
Updated: Jul 26, 2026

Fabricating Nanogaps by Nanoskiving
Published on: May 13, 2013
Bandgap widening of titania through semiconductor support interactions
Marc Gärtner1, Viatcheslav Dremov, Paul Müller
1Institut für Anorganische Chemie II, Universität Erlangen-Nürnberg, 91058 Erlangen (Germany).
Abstract:
Silica-supported titania powders with 50, 36, 13 and 4 wt% of TiO2 (TiO2-50/SiO2, TiO2-36/SiO2, TiO2-13/SiO2 and TiO2-4/SiO2) were prepared by hydrolysis of TiCl4 in the presence of silica, followed by calcination at 500 degrees C. The formation of Ti-O-Si linkages was confirmed by diffuse reflectance infrared Fourier transform spectroscopy. Atomic force microscopy indicated the presence of titania crystals larger than 15 nm. All supported materials exhibited a blue-shift of the TiO2 absorption edge, which was attributed to an electronic semiconductor support interaction. Bandgap energies of TiO2-50/SiO2, TiO2-36/SiO2, TiO2-13/SiO2 and TiO(2)4/SiO2 were measured to be 3.28, 3.36, 3.40 and 3.42 eV, respectively, as compared to 3.15 eV for unsupported TiO2. From these values, and from the quasi-Fermi level of electrons, a high anodic shift of both the valence and the conduction band was estimated. X-ray photoelectron spectroscopy (XPS) measurements of oxygen 1s- and titanium 2p-binding energies confirmed the anodic shift of the band edges.
More Related Videos
06:44Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
08:54Vibrational Spectra of a N719-Chromophore/Titania Interface from Empirical-Potential Molecular-Dynamics Simulation, Solvated by a Room Temperature Ionic Liquid
Published on: January 25, 2020
Related Concept Videos
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...