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Stochastic resonance in bulk semiconductor lasers.

Francesco Pedaci1, Massimo Giudici, Jorge R Tredicce

  • 1Institut Non-linéaire de Nice, UMR 6618 Centre National de la Recherche Scientifique, Université de Nice Sophia-Antipolis, 06560 Valbonne, France.

Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics
|May 21, 2005
PubMed
Summary

Researchers tuned semiconductor laser properties to control mode hopping. They observed stochastic resonance, a phenomenon where noise enhances signal detection, under specific sinusoidal modulation conditions.

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Area of Science:

  • Nonlinear dynamics
  • Semiconductor lasers
  • Quantum optics

Background:

  • Mode hopping in semiconductor lasers is a complex nonlinear phenomenon.
  • Controlling the stochastic time scale of mode hopping is crucial for laser applications.
  • External noise and modulation can significantly influence laser dynamics.

Purpose of the Study:

  • To investigate the effect of external noise and sinusoidal modulation on mode hopping in semiconductor lasers.
  • To demonstrate and characterize stochastic resonance in the modal intensities of a bulk semiconductor laser.
  • To explore the relationship between modulation parameters, laser temperature, and resonance phenomena.

Main Methods:

  • Tuning laser substrate temperature and pumping current to control mode hopping time scales.

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  • Applying external noise and sinusoidal modulation to the pumping current.
  • Analyzing modal intensities in the spectral domain.
  • Statistical analysis of residence time probability distributions.
  • Varying modulation frequency to identify bona fide resonance.

    • Main Results:

    • Symmetry of residence times during mode hopping can be maintained by tuning temperature and current.
    • Sinusoidal modulation below a critical amplitude does not affect hopping symmetry.
    • Stochastic resonance is observed in modal intensities under specific modulation conditions.
    • Resonance is confirmed through spectral analysis and statistical indicators.
    • Resonance occurs at modulation periods twice the average residence time without modulation.

    Conclusions:

    • The stochastic time scale of mode hopping in semiconductor lasers is controllable.
    • Stochastic resonance can be induced and observed in semiconductor lasers.
    • Laser substrate temperature plays a key role in determining resonance conditions.
    • This study provides a method for characterizing and potentially utilizing stochastic resonance in semiconductor lasers.