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Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells
A M Tyryshkin1, S A Lyon, W Jantsch
1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 USA.
Abstract:
Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 mus for an ensemble of free two-dimensional electrons confined in a Si/SiGe quantum well. The decoherence can be understood in terms of momentum scattering causing fluctuating effective Rashba fields. Further confining the electrons into a nondegenerate (other than spin) ground state of a quantum dot can be expected to eliminate this decoherence mechanism.
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