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Updated: Aug 17, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots
1CNRS-Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France.
Abstract:
We report on optical orientation of singly charged excitons (trions) in charge-tunable self-assembled InAs/GaAs quantum dots. When the charge varies from 0 to -2, the trion photoluminescence of a single quantum dot shows up and under quasiresonant excitation gets progressively polarized from zero to approximately 100%. This behavior is interpreted as the electric control of the trion thermalization process, which subsequently acts on the hole-spin relaxation driven in nanosecond time scale by the anisotropic electron-hole exchange. This is supported by the excitation spectroscopy and time-resolved measurements of a quantum dot ensemble.

