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Oxygen plasma-treatment effects on Si transfer
Bryan A Langowski1, Kathryn E Uhrich
1Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA.
Langmuir : the ACS Journal of Surfaces and Colloids
|June 29, 2005
Summary
Oxygen plasma treatment reduces silicon transfer during microcontact printing (muCP) of poly(dimethylsiloxane) (PDMS) stamps. This study investigates plasma parameters
Area of Science:
- Surface science and materials engineering.
- Nanotechnology and microfabrication.
- Polymer science and surface modification.
Background:
- Poly(dimethylsiloxane) (PDMS) stamps are widely used in microcontact printing (muCP) for their hydrophilicity.
- Oxygen plasma treatment enhances PDMS hydrophilicity but can lead to silicon-containing fragment transfer.
- The impact of plasma parameters on this undesirable silicon transfer is not well understood.
Purpose of the Study:
- To investigate the effect of oxygen plasma treatment parameters on silicon transfer from PDMS stamps during muCP.
- To quantify silicon transfer using X-ray photoelectron spectroscopy (XPS).
- To analyze topographical changes on PDMS stamps using scanning electron microscopy (SEM).
Main Methods:
- Unpatterned PDMS stamps were treated with oxygen plasma under varied conditions.
- Stamps were used for muCP of deionized water onto poly(methyl methacrylate) (PMMA) substrates.
- PMMA substrates were analyzed by XPS for silicon quantification; PDMS stamps were analyzed by SEM for topography.
Main Results:
- All oxygen plasma treatments significantly reduced silicon transfer compared to untreated PDMS stamps.
- Silicon transfer originates from residual PDMS fragments not eliminated by plasma treatment.
- No correlation was found between stamp topographical changes and the extent of silicon transfer.
Conclusions:
- Oxygen plasma treatment is effective in minimizing silicon transfer during muCP of PDMS.
- Understanding plasma parameters is crucial for optimizing PDMS surface modification and reducing contamination.
- Stamp topography changes do not predict the amount of silicon fragment transfer.