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Updated: Aug 17, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Wide-bandwidth mode-hop-free tuning of extended-cavity GaN diode lasers
Johan Hult1, lain S Burns, Clemens F Kaminski
1Department of Chemical Engineering, Cambridge University, Pembroke Street, Cambridge CB2 3RA, UK. jfh36@cheng.cam.ac.uk
Abstract:
We present a new approach for extended-cavity diode-laser tuning to achieve wide mode-hop-free tuning ranges. By using a multiple piezoactuated grating mount, the cavity length and grating angle in the laser can be adjusted independently, allowing mode-hop-free tuning without the need for a mechanically optimized pivot-point mount. Furthermore, synchronized diode injection-current tuning allows diode lasers without antireflection coatings to be employed. In combination these two techniques make the construction of a cheap, efficient, and easily optimized extended-cavity diode laser possible. A theoretical analysis is presented for optimal control of piezoactuator displacements and injection current to achieve the widest possible mode-hop-free tuning ranges, and a comparison is made with measurements. The scheme is demonstrated for blue and violet GaN lasers operating at approximately 450 nm and approximately 410 nm, for which continuous tuning ranges exceeding 90 GHz have been achieved. Examples of applications of these lasers are also given.

