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N-Channel field-effect transistors with floating gates for extracellular recordings

Sven Meyburg1, Michael Goryll, Jürgen Moers

  • 1Institute of Thin Films and Interfaces and Center of Nanoelectronic Systems, Bio- and Chemosensors (ISG2), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany.

Summary

This study introduces a novel floating gate field-effect transistor (FET) for robust extracellular signal recording from electrogenic cells. The device demonstrates lower noise and reusable capabilities, paving the way for advanced cellular monitoring.

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