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Updated: Aug 16, 2026

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron
1Department of Physics, Yeungnam University, Gyeongsan 712-749, South Korea.
Abstract:
Photoreflectance measurements were performed to investigate the optical properties in the electron beam irradiation semi-insulating GaAs(e-beam irradiation GaAs) and semi-insulating GaAs(SI-GaAs). A considerable increase of the PR amplitudes has been registered after the e-beam irradiation in comparison with the GaAs. It is that result of a higher electron scattering on the lattice defects created by the e-beam.
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