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Published on: February 28, 2016
Passively mode-locking Nd:Gd0.5Y0.5VO4 laser with an In0.25Ga0.75As absorber grown at low temperature
Yong-Gang Wang1, Xiao-Yu Ma, Ya-Xian Fan
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. chinawygxjw@163.com
Abstract:
We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd0.5Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz.
