Related Experiment Video
Updated: Aug 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Reinvestigation of Ge4Se9 based on single-crystal data
1Department of Molecular Science and Technology, Ajou University, Suwon 442-749, South Korea.
Abstract:
Tetragermanium nonaselenide, Ge4Se9, adopts a two-dimensional layered structure. The layer is made up of infinite chains of corner-sharing GeSe4 tetrahedra and the chains are connected via the Ge2Se7 unit to form the two-dimensional layer. These layers are stacked to form the three-dimensional structure with a van der Waals gap. A previous structure report on Ge4Se9 based on powder diffraction data [Fjellvåg, Kongshaug & Stølen (2001). J. Chem. Soc. Dalton Trans. pp. 1043-1045] is comparable with our results except for the absolute structure determination.

