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Sharp-interface projection of a fluctuating phase-field model.

R Benítez1, L Ramírez-Piscina

  • 1Departament de Física Aplicada, Universitat Politècnica de Catalunya, Doctor Marañón 44, E-08028 Barcelona, Spain.

Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics
|August 11, 2005
PubMed
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We derived a sharp-interface projection for fluctuating phase-field models, incorporating noise into diffusion and boundary conditions. This method accounts for system fluctuations in crystal growth simulations without relying on the fluctuation-dissipation theorem.

Area of Science:

  • Physics
  • Materials Science
  • Computational Science

Background:

  • Phase-field models are crucial for simulating solidification processes.
  • Fluctuations play a significant role in crystal growth dynamics.
  • Existing models often lack comprehensive methods for incorporating fluctuations, especially in nonvariational formulations.

Purpose of the Study:

  • To derive a sharp-interface limit for a generic fluctuating phase-field model.
  • To introduce a method for accounting for both internal and external fluctuations.
  • To enable quantitative phase-field simulations of crystal growth with proper system fluctuations.

Main Methods:

  • Derivation of the sharp-interface limit from a fluctuating phase-field model.
  • Development of a projection that includes noise terms in diffusion equations and boundary conditions.

Related Experiment Videos

  • Procedure independent of the fluctuation-dissipation theorem, applicable to variational and nonvariational models.

    • Main Results:

    • A sharp-interface projection incorporating noise in diffusion and moving boundary conditions.
    • The method successfully accounts for thermodynamic fluctuations in nonvariational phase-field models.
    • Enhanced computational efficiency and flexibility for describing physical situations in phase-field simulations.

    Conclusions:

    • The derived sharp-interface projection enables quantitative phase-field simulations of crystal growth.
    • The method's independence from the fluctuation-dissipation theorem broadens its applicability.
    • This work facilitates more accurate modeling of solidification phenomena by including crucial system fluctuations.