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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
R Hanson1, L H Willems van Beveren, I T Vink
1Kavli Institute of Nanoscience, Delft University of Technology, GA Delft, The Netherlands.
Abstract:
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing readout of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on the in-plane magnetic field.
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