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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Strain induced half-metal to semiconductor transition in GdN

Chun-gang Duan1, R F Sabiryanov, Jianjun Liu

  • 1Department of Physics, University of Nebraska, Omaha, Nebraska 68182-0266, USA. dcg@cosmos.unomaha.edu

Physical Review Letters
|August 11, 2005
PubMed

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