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Updated: Aug 16, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Prediction of the capacitance line shape in two-channel quantum dots
1Université de Genève, DPMC, 24 Quai Ernest Ansermet, CH-1211 Genèva 4, Switzerland.
Abstract:
We propose a setup to realize two-channel Kondo physics using quantum dots. We discuss how the charge fluctuations on a small dot can be accessed by using a system of two single-electron transistors arranged in parallel. We derive a microscopic Hamiltonian description of the setup that allows us to make the connection with the two-channel Anderson model (of extended use in the context of heavy-fermion systems) and in turn make detailed predictions for the differential capacitance of the dot. Its line shape, which we determined precisely, shows a robust behavior that should be experimentally verifiable.
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