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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Active optical control of the terahertz reflectivity of high-resistivity semiconductors
L Fekete1, J Y Hlinka, E Kadlec
1Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Optics Letters
|August 12, 2005
Abstract:
We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R <3%) and highly reflective (R >85%) limits by means of the intensity and wavelength of the optical illumination.

