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Related Experiment Videos

Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies.

Zuzanna Liliental-Weber1, Dmitri N Zakharov, Kin M Yu

  • 1Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron road, Berkeley, CA 94720, USA. z_liliental-weber@lbl.gov

Journal of Electron Microscopy
|August 27, 2005
PubMed
Summary
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Compositional modulation in Indium Gallium Nitride (InGaN) layers was studied using Transmission Electron Microscopy (TEM) and X-ray diffraction (XRD). Higher indium content and AlN buffer layer mismatch increased modulation, suggesting surface roughness influences In segregation.

Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Research

Background:

  • Indium Gallium Nitride (InGaN) is a crucial material for optoelectronic devices.
  • Understanding compositional variations in InGaN is vital for device performance.
  • Growth near the miscibility gap can lead to complex nanostructures.

Purpose of the Study:

  • To investigate compositional modulation in InGaN layers grown near the miscibility gap.
  • To correlate modulation characteristics with growth parameters like indium content and buffer layers.
  • To explore the underlying mechanisms driving compositional variations.

Main Methods:

  • Utilized Transmission Electron Microscopy (TEM) for direct imaging and diffraction analysis.
  • Employed X-ray diffraction (XRD) in theta-2theta coupled geometry to detect periodic structures.

Related Experiment Videos

  • Grew In(x)Ga(1-x)N samples (0.34 < x < 0.8) on sapphire substrates with AlN or GaN buffer layers via molecular beam epitaxy.

    • Main Results:

    • Observed periodic compositional modulation, evidenced by extra diffraction spots in TEM and satellite reflections in XRD.
    • Determined ordering periods (delta) along the c-axis: ~45 Å for x=0.5 and ~66 Å for x=0.78 on AlN buffer.
    • Found modulation absent for x=0.34 on GaN buffer; larger delta correlated with higher In content and AlN buffer mismatch.

    Conclusions:

    • Periodic compositional modulation occurs in InGaN near the miscibility gap, influenced by indium content and buffer layer.
    • TEM and XRD results were in good agreement regarding modulation period.
    • Surface roughness of the AlN buffer layer is proposed as a factor promoting In segregation and compositional modulation.