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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Kondo effect in electromigrated gold break junctions

A A Houck1, J Labaziewicz, E K Chan

  • 1Center for Bits and Atoms and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

Nano Letters
|September 15, 2005
PubMed

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