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Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays
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Controlled silicon surface functionalization by alkene hydrosilylation.

Alexander Langner1, Anthony Panarello, Sandrine Rivillon

  • 1Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA.

Journal of the American Chemical Society
|September 15, 2005
PubMed
Summary

UV irradiation enables efficient immobilization of indene ligands onto oxide-free silicon surfaces. This method avoids substrate oxidation, unlike solvent-mediated reactions that can be hindered by solvent interactions or catalyst-induced oxidation.

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Area of Science:

  • Surface Chemistry
  • Materials Science
  • Nanotechnology

Background:

  • Ligand immobilization is crucial for surface functionalization.
  • Hydrogen-terminated silicon surfaces offer unique reactivity.
  • Understanding solvent and catalyst effects is key to controlling surface reactions.

Purpose of the Study:

  • To investigate the immobilization of indene ligands onto hydrogen-terminated silicon surfaces.
  • To compare immobilization efficiency on oxide-free and oxidized silicon.
  • To elucidate the mechanism of UV-induced ligand attachment.

Main Methods:

  • Infrared absorption spectroscopy was used to monitor ligand immobilization.
  • Two types of surfaces were studied: oxide-free Si [H/Si(111)] and oxidized Si [H/SiO2/Si].
  • The influence of different solvents (2-propanol, chlorobenzene) and a catalyst (H2PtCl6) was examined.

Main Results:

  • Solvent choice critically affects catalyst activity and ligand attachment.
  • 2-propanol hinders ligand attachment, while chlorobenzene allows some attachment but causes silicon oxidation.
  • UV irradiation on oxide-free surfaces promotes efficient ligand immobilization without substrate oxidation.
  • UV-induced immobilization on H-terminated surfaces with a thin oxide layer [H/SiO2/Si] was inactive.

Conclusions:

  • UV irradiation is a superior method for indene ligand immobilization on oxide-free silicon surfaces.
  • The mechanism of UV-induced immobilization involves excitation of electron-hole pairs (excitons) in the substrate.
  • Surface oxidation and solvent choice significantly impact the success of ligand immobilization strategies.