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Published on: September 28, 2016
Quantum-dot growth simulation on periodic stress of substrate
Chang Zhao1, Y H Chen, C X Cui
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China. czhao@red.semi.ac.cn
Abstract:
InAs quantum dots (QDs) are grown on the cleaved edge of an In(x)Ga(1-x)AsGaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an In(x)Ga(1-x)As layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic Monte Carlo method. Our results show that a good alignment of QDs can be achieved when the strain energy reaches 2% of the atomic binding energy. The simulation results are in excellent qualitative agreement with our experiments.
