GaSb based lasers operating near 2.3 microm for high resolution absorption spectroscopy

Area of Science:

• Semiconductor Lasers
• Quantum Well Technology
• Gas Spectroscopy

Background:

• Development of semiconductor lasers operating reliably above room temperature is crucial for practical applications.
• Gallium Antimonide (GaSb) based materials offer unique properties for infrared optoelectronics.

Purpose of the Study:

• To report on the performance of a new type of GaSb-based semiconductor distributed feedback multiple quantum well lasers.
• To evaluate their operational characteristics, including tunability and output power.
• To assess their suitability for gas detection applications.

Main Methods:

• Fabrication and characterization of GaSb-based distributed feedback (DFB) multiple quantum well (MQW) lasers.
• Continuous wave (CW) operation testing above room temperature.
• Tuning range evaluation using current and temperature variations.
• Spectral analysis within the methane and ammonia overtone absorption bands.

Main Results:

• Lasers operated in continuous wave mode significantly above room temperature.
• Demonstrated good tunability with temperature (0 to +60 °C) and current (up to 120 mA).
• Achieved high power (1-3 mW) in a single mode regime.
• Tuning range of up to 12 cm⁻¹ in the spectral region of methane and ammonia overtones.

Conclusions:

• The developed GaSb-based DFB-MQW lasers show promising performance for operation above room temperature.
• Their high power, single-mode operation, and wide tunability make them suitable for sensitive gas detection.
• These lasers can be utilized for the spectroscopic detection of methane, ammonia, and other gases.