Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Baroreflex attenuation after hypotension induced by vena caval occlusion in anesthetized dogs.

The American journal of physiology·1995
Same author

Role of sympathetic nervous system in hypotension induced by platelet-activating factor in anesthetized dogs.

Circulatory shock·1993
Same author

[The effectiveness of radiotherapy for Merkel cell carcinoma].

Nihon Igaku Hoshasen Gakkai zasshi. Nippon acta radiologica·1992
Same author

Performance of an enzyme-linked immunosorbent assay system for antibodies to hepatitis C virus with two new antigens (c11/c7).

Clinical chemistry·1992
Same author

[Effect of suplatast tosilate (IPD-1151T) on types I-IV allergic reactions].

Nihon yakurigaku zasshi. Folia pharmacologica Japonica·1992
Same author

[The first cholera case diagnosed early in the clinical laboratory by DNA probe method].

Kansenshogaku zasshi. The Journal of the Japanese Association for Infectious Diseases·1992
Same journal

Daily briefing: How cooperation built the world.

Nature·2026
Same journal

Deep-sea oddities and boatloads of other new species - June's best science images.

Nature·2026
Same journal

From cloning to gene-editing: the enduring legacy of Dolly the sheep.

Nature·2026
Same journal

Time to give hydration breaks the red card? What science says about keeping cool.

Nature·2026
Same journal

Universities are relying on AI-detection software to catch cheating. How well do the programs work?

Nature·2026
Same journal

Daily briefing: 'Cyborg' cockroaches breathe underwater with printed suit.

Nature·2026
See all related articles

Related Experiment Video

Updated: Jul 6, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

An organic thyristor.

F Sawano1, I Terasaki, H Mori

  • 1Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan.

Nature
|September 24, 2005
PubMed
Summary
This summary is machine-generated.

Researchers discovered a giant nonlinear resistance effect in a novel organic electronic device. This organic thyristor functions as an inverter, converting direct current to alternating current, offering new possibilities for electronic applications.

More Related Videos

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Related Experiment Videos

Last Updated: Jul 6, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Organic Electronics

Background:

  • Thyristors are nonlinear electronic devices with bistable resistance, crucial for inverters and power control.
  • Nonlinear resistance materials are vital for practical electronics and fundamental physics research.
  • Conventional thyristors rely on p-n junction interface effects for their nonlinear behavior.

Purpose of the Study:

  • To report the discovery of a giant nonlinear resistance effect in a conducting organic salt.
  • To characterize the voltage-current properties of this organic material.
  • To explore the potential of organic materials as intrinsic thyristors.

Main Methods:

  • Investigated the conducting organic salt theta-(BEDT-TTF)2CsCo(SCN)4.
  • Analyzed the voltage-current characteristics of the material.
  • Compared the observed nonlinear resistance to conventional thyristors.

Main Results:

  • The organic salt theta-(BEDT-TTF)2CsCo(SCN)4 exhibits a giant nonlinear resistance effect.
  • Its voltage-current characteristics mimic those of a conventional thyristor.
  • The material functions as an intrinsic organic thyristor, acting as a direct-to-alternating current converter.

Conclusions:

  • The discovered organic material demonstrates thyristor-like behavior as a bulk phenomenon, not reliant on p-n junctions.
  • The effect is attributed to the current-induced melting of insulating charge-order domains.
  • This finding opens avenues for novel organic electronic devices and fundamental physics studies.