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Related Experiment Videos

Magnetic-field-induced band-structure change in CeBiPt.

N Kozlova1, J Hagel, M Doerr

  • 1Institut für Festkörper- und Werkstoffforschung Dresden, D-01171 Dresden, Germany.

Physical Review Letters
|October 4, 2005
PubMed
Summary

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A field-induced change in the electronic band structure of Cerium Bismuth Platinum (CeBiPt) was observed. This change, linked to Cerium 4f electrons, affects charge-carrier concentration and Fermi surface topology.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Materials

Background:

  • Cerium-based intermetallic compounds exhibit complex electronic properties.
  • Understanding field-induced changes in electronic band structure is crucial for novel material applications.

Purpose of the Study:

  • To investigate the field-induced electronic band structure modifications in CeBiPt.
  • To elucidate the role of Cerium 4f electrons in these changes.

Main Methods:

  • Electrical-transport measurements were performed in pulsed magnetic fields.
  • Shubnikov-de Haas oscillations were analyzed.
  • Electronic band-structure calculations were conducted.

Main Results:

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  • A significant increase in charge-carrier concentration (approx. 30%) was observed above 25 T.
  • The Shubnikov-de Haas signal disappeared concurrently with the carrier concentration change.
  • The observed effects were specific to CeBiPt, with the non-4f analog LaBiPt showing no such changes.
  • Band-structure calculations indicated a 4f-polarization-induced alteration of the Fermi surface topology.

    • Conclusions:

    • The electronic band structure of CeBiPt is sensitive to external magnetic fields.
    • Cerium 4f electrons play a critical role in mediating field-induced changes in the electronic properties.
    • These findings suggest a mechanism for tuning the electronic properties of CeBiPt via magnetic fields.