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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Growth and optical properties of strained GaAs-GaxIn 1-x P core-shell nanowires

Niklas Sköld1, Lisa S Karlsson, Magnus W Larsson

  • 1Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.

Nano Letters
|October 13, 2005
PubMed

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