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Updated: Aug 15, 2026
Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
Published on: March 29, 2016
Structures and energetics of hydrogen-terminated silicon nanowire surfaces
R Q Zhang1, Y Lifshitz, D D D Ma
1Center of Super-Diamond and Advanced Films, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China. aprqz@cityu.edu.hk
Abstract:
The analysis and density-functional tight-binding simulations of possible configurations of silicon nanowires (SiNWs) enclosed by low-index surfaces reveal a number of remarkable features. For wires along <100>, <110>, and <111> directions, many low-index facet configurations and cross sections are possible, making their controlled growth difficult. The 112 wires are the most attractive for research and applications because they have only one configuration of enclosing low-index facets with a rectangular cross section, enclosed with the most stable (111) facet and the (110) facet next to it. In general, the stability of the SiNWs is determined by a balance between (1) minimization of the surface energy gamma(111)
