Related Experiment Video

Updated: Aug 1, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

Sign changes of intrinsic spin Hall effect in semiconductors and simple metals: first-principles calculations

Y Yao1, Z Fang

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.

Physical Review Letters
|October 26, 2005
PubMed

More Related Videos

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser09:00

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser

Published on: June 28, 2018

Related Concept Videos

The Pauli Exclusion Principle03:06

The Pauli Exclusion Principle

The arrangement of electrons in the orbitals of an atom is called its electron configuration. We describe an electron configuration with a symbol that contains three pieces of information:
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
The Hall Effect01:30

The Hall Effect

Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...