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Updated: Aug 15, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
Evgenii S Moskalenko1, Fredrik K Karlsson, Vesselin T Donchev
1Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Abstract:
Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains.
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