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Related Experiment Videos

Pristine semiconducting [110] silicon nanowires.

Abhishek Kumar Singh1, Vijay Kumar, Ryunosuke Note

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan. abhishek@imr.edu

Nano Letters
|November 10, 2005
PubMed
Summary

Pristine silicon nanowires along the [110] direction are indirect band gap semiconductors. Surface reconstruction influences their electronic structure and potential use in nanoscale devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Silicon nanowires are promising for nanoscale electronic devices.
  • Understanding their electronic properties is crucial for device applications.

Purpose of the Study:

  • To investigate the electronic properties of pristine silicon nanowires oriented along the [110] direction.
  • To analyze the impact of surface reconstruction on their semiconductor behavior.

Main Methods:

  • Ab initio calculations were performed on silicon nanowires.
  • The study focused on nanowires with a bulk Si core and specific lateral plane orientations ((100) and (110)).

Main Results:

  • Pristine [110]-oriented silicon nanowires exhibit an indirect band gap, confirming their semiconductor nature.

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  • Atomic reconstruction on the (100) planes, with perpendicular dimer arrays, was observed.
  • Surface reconstruction can lead to polytypism in thicker nanowires, affecting their electronic structure.

    • Conclusions:

    • The findings highlight the indirect band gap nature of [110] silicon nanowires.
    • Surface reconstruction plays a significant role in determining their electronic properties.
    • These results have implications for the design and application of silicon nanowires in nanoscale devices.