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Related Experiment Videos

Ultrafast all-optical modulation on a silicon chip.

Stefan F Preble1, Qianfan Xu, Bradley S Schmidt

  • 1School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA. sfp24@cornell.edu

Optics Letters
|November 11, 2005
PubMed
Summary

We demonstrated ultrafast all-optical modulation on a silicon chip using a micrometer-sized device. This technology enables high-speed optical signal modulation exceeding 5 Gbit/s.

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Area of Science:

  • Photonics
  • Optoelectronics
  • Materials Science

Background:

  • All-optical modulation is crucial for high-speed optical communication.
  • Silicon photonics offers a scalable platform for integrated optical devices.
  • Controlling carrier dynamics is key to achieving fast modulation speeds.

Purpose of the Study:

  • To experimentally demonstrate ultrafast all-optical modulation using a silicon photonic integrated device.
  • To investigate the role of photoexcited carriers in modulating device transmission.
  • To utilize a p-i-n junction for controlling carrier lifetimes and enhancing modulation speed.

Main Methods:

  • Fabrication of a micrometer-sized silicon photonic integrated device.
  • Generation of photoexcited carriers using low-energy pump pulses.

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  • Integration of a p-i-n junction for carrier lifetime control.
  • Characterization of optical signal modulation at speeds greater than 5 Gbit/s.

    • Main Results:

    • Strong modulation of device transmission by photoexcited carriers was achieved.
    • Carrier extraction in as short as 50 ps was realized by reverse biasing the p-i-n junction.
    • All-optical modulation exceeding 5 Gbit/s was successfully demonstrated on the silicon chip.

    Conclusions:

    • Ultrafast all-optical modulation is feasible using compact silicon photonic devices.
    • Integrated p-i-n junctions effectively control carrier dynamics for high-speed modulation.
    • This technology holds promise for advanced optical communication systems.