Temperature dependence of excitonic radiative decay in CdSe quantum dots: the role of surface hole traps
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Updated: Aug 14, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Marco Califano1, Alberto Franceschetti, Alex Zunger
1National Renewable Energy Laboratory, Golden, CO 80401, USA.
Abstract:
Using atomistic, semiempirical pseudopotential calculations, we show that if one assumes the simplest form of a surface state in a CdSe nanocrystal--an unpassivated surface anion site--one can explain theoretically several puzzling aspects regarding the observed temperature dependence of the radiative decay of excitons. In particular, our calculations show that the presence of surface states leads to a mixing of the dark and bright exciton states, resulting in a decrease of 3 orders of magnitude of the dark-exciton radiative lifetime. This result explains the persistence of the zero-phonon emission line at low temperature, for which thermal population of higher-energy bright-exciton states is negligible. Thus, we suggest that surface states are the controlling factor of dark-exciton radiative recombination in currently synthesized colloidal CdSe nanocrystals.
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