Related Experiment Video
Updated: Aug 14, 2026
08:58
Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Low temperature growth of boron nitride nanotubes on substrates
Jiesheng Wang1, Vijaya K Kayastha, Yoke Khin Yap
1Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA.
Nano Letters
|December 15, 2005
Abstract:
High growth temperatures (>1100 degrees C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 degrees C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.
