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Electromigration forces on ions in carbon nanotubes.

S Heinze1, Neng-Ping Wang, J Tersoff

  • 1Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany. heinze@physnet.uni-hamburg.de

Physical Review Letters
|December 31, 2005
PubMed
Summary

We calculated electromigration forces on ions in carbon nanotube transistors. These forces are strongest during transistor turn-on, driven by a quantum "wind force" that can be controlled by gate voltage.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Nanotechnology

Background:

  • Electromigration forces are crucial for understanding ion transport in nanoscale devices.
  • Carbon nanotube transistors are promising for future electronics due to their unique properties.

Purpose of the Study:

  • To calculate electromigration forces on adsorbed ions in carbon nanotube transistors.
  • To investigate the driving mechanisms and gate voltage dependence of these forces.

Main Methods:

  • Self-consistent nonequilibrium Green's function (NEGF) calculations.
  • Tight-binding approximation for a ballistic device model.
  • Analysis of ion forces, particularly in different transistor regimes (off, turn-on, on).

Main Results:

  • Electromigration forces are significantly larger in the transistor's turn-on regime compared to off and on states.
  • The dominant force driving electromigration in the channel is the "wind force."
  • The effective valence (Z*) sign is independent of ion charge but reversible with gate voltage, highlighting the quantum nature of the wind force.

Conclusions:

  • The gate voltage offers a method to control the direction of electromigration forces in carbon nanotube transistors.
  • The quantum mechanical "wind force" plays a critical role in ion transport within these devices.
  • These findings have implications for the stability and operation of nanoelectronic devices.