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Updated: Jul 31, 2026

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Role of defect sites and Ga polarization in the magnetism of Mn-doped GaN
D J Keavney1, S H Cheung, S T King
1Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Abstract:
We report a study of the Mn local structure, magnetism, and Ga moments in molecular beam epitaxy grown Mn-doped GaN films. Using x-ray absorption spectroscopy and magnetic circular dichroism, we find two distinct Mn sites and a Ga moment antiparallel to Mn. First-principles calculations reproduce this phenomenology and indicate that Mn preferentially populates Ga sites neighboring N split interstitial defects. These results show that defects may strongly affect the Mn ordering and magnetism, and that the GaN valence band is polarized, providing a long-range ferromagnetic ordering mechanism for Ga1-xMnxN.
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