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Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron

X Kong1, A Trampert, K H Ploog

  • 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany. xkong@pdi-berlin.de

Micron (Oxford, England : 1993)
|January 3, 2006
PubMed

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