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Related Experiment Videos

Conductivity and gating of silicon ringchains.

Joseph L Speyer1, Igor V Ovchinnikov, Daniel Neuhauser

  • 1Department of Chemistry and Biochemistry, University of California-Los Angeles (UCLA), Los Angeles, California 90095-1569, USA.

The Journal of Chemical Physics
|January 6, 2006
PubMed
Summary

Researchers explored quantum silicon rings, finding electric and magnetic fields significantly alter conductivity. This suggests potential for developing novel silicon-based logical devices.

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Area of Science:

  • Condensed matter physics
  • Quantum electronics
  • Nanotechnology

Background:

  • Advancements in bottom-up fabrication enable the creation of precisely structured silicon nanostructures.
  • Quantum phenomena in nanoscale materials offer unique electronic properties for device applications.

Purpose of the Study:

  • To investigate the electrical conductivity of closely spaced quantum silicon rings.
  • To analyze the influence of electric and magnetic fields on electron transport in these structures.
  • To assess the potential of silicon rings for logical device applications.

Main Methods:

  • One-dimensional and two-dimensional conductivity calculations were performed.
  • Simulations considered sets of several closely spaced quantum silicon rings.

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  • The effects of electric and magnetic gating were analyzed.

    • Main Results:

    • Electron transmission through the silicon rings is highly sensitive to electric and magnetic gatings.
    • Distinct band features were observed even in structures with only two or three rings.
    • Electric-field gating demonstrated comparable effectiveness to Aharonov-Bohm magnetic gating.

    Conclusions:

    • Quantum silicon rings exhibit tunable electronic properties through external field manipulation.
    • The observed sensitivity and band features highlight their promise for future logical devices.
    • Electric-field gating presents a viable alternative to magnetic gating for controlling conductivity in these systems.