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Updated: Jul 12, 2026
Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
Published on: December 16, 2011
Carboxylic acid chemistry at the Ge(100)-2 x 1 interface: bidentate bridging structure formation on a semiconductor
Michael A Filler1, James A Van Deventer, Albert J Keung
1Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
Abstract:
The reactions of acetic acid, acetic-d3 acid-d, and formic acid with the Ge(100)-2 x 1 surface have been investigated using multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. The infrared and photoelectron data provide experimental evidence for an O-H dissociation product at 310 K. DFT calculations indicate that the O-H dissociation pathway is significantly favored, both kinetically and thermodynamically, over other potential reaction pathways. All of the carboxylic acids studied exhibit unexpected vibrational modes between 1400 and 1525 cm(-1), which are attributed to the presence of a bidentate bridging structure where both oxygen atoms interact directly with the surface.
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