Electrically injected quantum-dot photonic crystal microcavity light sources

The design, fabrication, and characterization of an electrically injected quantum-dot photonic crystal microcavity light source are described. The optical gain in the GaAs/AlGaAs-based device is provided by self-organized InGaAs quantum dots with ground-state room-temperature emission at 1.1 microm. The carriers are injected directly into the photonic crystal microcavity, which contains approximately 50 dots, avoiding surface state recombination in the photonic crystal pattern. The spectral characteristics of a single-defect photonic crystal microcavity show a single 2 nm broad microcavity resonance. The output power is of the order of a few tens of nanowatts.