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Related Experiment Videos

Dispersive-diffusion-controlled distance-dependent recombination in amorphous semiconductors.

Kazuhiko Seki1, Mariusz Wojcik, M Tachiya

  • 1National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 5, Tsukuba, Ibaraki 305-8565, Japan. k-seki@aist.go.jp

The Journal of Chemical Physics
|February 8, 2006
PubMed
Summary
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Photoluminescence in amorphous semiconductors follows a power law decay due to dispersive electron transport. This study develops methods to calculate reaction rates and survival probabilities for dispersive diffusion with long-range reactivity, explaining recombination kinetics.

Area of Science:

  • Solid State Physics
  • Materials Science
  • Photophysics

Background:

  • Amorphous semiconductors exhibit power-law photoluminescence decay at long times, governed by dispersive electron transport.
  • Dispersive transport is typically characterized by the power-law exponent (alpha) in transient current measurements.
  • Geminate recombination in these materials occurs via distance-dependent radiative tunneling.

Purpose of the Study:

  • To formulate methods for calculating reaction rates and survival probabilities for carriers undergoing dispersive diffusion with long-range reactivity.
  • To apply these methods to determine tunneling recombination rates under dispersive diffusion conditions.
  • To establish the theoretical condition for observing the relationship delta = alpha/2 + 1 in photoluminescence decay.

Main Methods:

Related Experiment Videos

  • Development of a theoretical framework to calculate reaction rates and survival probabilities for dispersive diffusion with long-range reactivity.
  • Application of the formulated method to derive tunneling recombination rates.
  • Comparison of theoretical recombination rates with experimental photoluminescence decay kinetics.

Main Results:

  • A theoretical condition, delta = alpha/2 + 1, for observing a specific relationship between photoluminescence decay exponent (delta) and dispersive transport exponent (alpha) was derived.
  • Theoretical recombination rates were calculated for dispersive diffusion with long-range reactivity.
  • The calculated rates were compared with the observed photoluminescence decay kinetics across the entire measured time range.

Conclusions:

  • The study provides a theoretical framework for understanding photoluminescence decay in amorphous semiconductors.
  • The developed method successfully explains the observed recombination kinetics by linking them to dispersive transport and tunneling.
  • The findings offer insights into the fundamental processes governing charge carrier recombination in disordered materials.