Cn films (n=50, 52, 54, 56, and 58) on graphite: cage size dependent electronic properties

Novel semiconducting materials have been prepared under ultrahigh-vacuum conditions by soft-landing mass-selected Cn+ (50< or =n<60; even n) on highly oriented pyrolytic graphite surfaces at mean kinetic energies of 6 eV. In all cases, Cn films grow according to the Volmer-Weber mechanism: the surface is initially decorated by two-dimensional fractal islands, which in later deposition stages become three-dimensional dendritic mounds. We infer that Cn aggregation is governed by reactive sites comprising adjacent pentagons (or heptagons) on individual cages. The resulting covalent cage-cage bonds are responsible for the unusually high thermal stability of the films compared to solid C60. The apparent activation energies for intact Cn sublimation range from 2.2 eV for C58 to 2.6 eV for C50 as derived from thermal desorption spectra. All Cn films exhibit a common valence-band ultraviolet photoelectron spectroscopy spectral feature located around the center of a broad highest occupied molecular-orbital (HOMO)-derived band (EB approximately 2.5 eV). This feature has been assigned to Cn units covalently linked to each other in polymeric structures. To within experimental accuracy, the same work function (4.8 eV) was determined for thick films of all Cn studied. In contrast, "HOMO" ionization potentials were cage size dependent and significantly lower than that obtained for C60. C58 exhibited the lowest HOMO (6.5 eV). Band gaps of Cn films have been determined by depositing small amounts of Cs atoms onto the topmost film layer. HOMO-lowest unoccupied molecular-orbital-derived band gaps between 0.8 eV (C52) and 1.8 eV (C50) were observed, compared to 1.5 eV for solid C60.