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Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors
B Sun1, G A Shi, S V S Nageswara Rao
1Department of Applied Science, the College of William and Mary, Williamsburg, Virginia 23187, USA.
Abstract:
Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multiphonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.
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