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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Are the structures of twist grain boundaries in silicon ordered at 0 K?

S von Alfthan1, P D Haynes, K Kaski

  • 1Laboratory of Computational Engineering, Helsinki University of Technology, P.O. Box 9203, FIN 02015 HUT, Finland.

Physical Review Letters
|February 21, 2006
PubMed

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