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Nitrogen diffusion in amorphous silicon nitride isotope multilayers probed by neutron reflectometry.

H Schmidt1, M Gupta, M Bruns

  • 1AG Thermochemie und Mikrokinetik, Fakultät für Natur-und Materialwissenschaften, TU Clausthal, D-38678 Clausthal-Zellerfeld, Germany.

Physical Review Letters
|February 21, 2006
PubMed
Summary

Researchers measured nitrogen self-diffusivities in amorphous silicon nitride using neutron reflectometry. This study provides crucial data on diffusion in amorphous solids, revealing a direct diffusion mechanism.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Amorphous Materials

Background:

  • Amorphous silicon nitride is a key model for covalently bound amorphous solids.
  • Understanding atomic mobility and self-diffusion is crucial for these materials.
  • Existing self-diffusivity data for amorphous silicon nitride is limited.

Purpose of the Study:

  • To quantify nitrogen self-diffusivities in amorphous silicon nitride.
  • To investigate the influence of structural relaxation on diffusion.
  • To determine the diffusion mechanism and activation energy.

Main Methods:

  • Utilized isotope-enriched Si3 14N4/Si3 15N4 multilayers.
  • Employed neutron reflectometry for precise diffusion measurements.
  • Analyzed time-dependent diffusion at 1150°C and over a temperature range of 950-1250°C.

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Main Results:

  • Measured nitrogen self-diffusivities between 10(-24) and 10(-21) m2/s.
  • Observed time-dependent diffusivities indicating structural relaxation.
  • Determined an activation enthalpy of (3.6 ± 0.4) eV for the relaxed state.

Conclusions:

  • Established quantitative self-diffusivity values for amorphous silicon nitride.
  • Provided evidence for a direct diffusion mechanism, independent of thermal point defects.
  • Highlighted the role of structural relaxation in the diffusion process within amorphous solids.