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Spin Hall effect in doped semiconductor structures.

Wang-Kong Tse1, S Das Sarma

  • 1Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA.

Physical Review Letters
|February 21, 2006
PubMed
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This study introduces a microscopic theory for the extrinsic spin Hall effect, calculating spin Hall conductivity using side-jump and skew-scattering mechanisms. The theory accurately predicts experimental results in GaAs structures, offering insights into spin transport phenomena.

Area of Science:

  • Condensed Matter Physics
  • Spintronics
  • Quantum Mechanics

Background:

  • The spin Hall effect (SHE) is a phenomenon where electron spins are deflected to opposite sides of a current-carrying conductor.
  • Understanding the extrinsic SHE, driven by spin-dependent scattering, is crucial for spintronic device applications.
  • Previous theories often simplified scattering mechanisms, limiting predictive accuracy.

Purpose of the Study:

  • To develop a microscopic theory for the extrinsic spin Hall effect.
  • To explicitly include side-jump and skew-scattering contributions in the calculation of spin Hall conductivity.
  • To validate the theory by comparing predictions with experimental data in GaAs structures.

Main Methods:

  • Diagrammatic perturbation theory was employed to formulate the microscopic theory.

Related Experiment Videos

  • Analytical calculations were performed to determine the spin Hall conductivity, considering side-jump and skew-scattering.
  • The derived theoretical predictions were applied to n- and p-doped 3D and 2D GaAs structures.

    • Main Results:

    • The theory shows that side-jump and skew-scattering contributions scale with (h/tau)/epsilonF.
    • Calculated spin Hall conductivity to charge conductivity ratios (sigma(s)/sigma(c)) in GaAs structures are approximately 10(-3)-10(-4).
    • These results show reasonable agreement with recent experimental findings in n-doped 3D GaAs.

    Conclusions:

    • The developed microscopic theory provides a robust framework for understanding the extrinsic spin Hall effect.
    • The explicit inclusion of side-jump and skew-scattering is vital for accurate theoretical predictions.
    • The agreement with experimental data validates the theory's applicability to semiconductor spintronics.