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InAs1-xPx nanowires for device engineering.
A I Persson1, M T Björk, S Jeppesen
1Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, S-221 00, Lund, Sweden.
Nano Letters
|March 9, 2006
Summary
We grew indium arsenide phosphide (InAs(1-x)P(x)) nanowires and heterostructures, studying phosphorus incorporation. These nanowires exhibit wurtzite structure and function as field-effect transistors.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Indium arsenide phosphide (InAs(1-x)P(x)) nanowires are promising for electronic applications.
- Controlling composition and structure is key for tuning their properties.
Purpose of the Study:
- To grow homogeneous InAs(1-x)P(x) nanowires and heterostructures.
- To investigate the influence of growth parameters on P incorporation.
- To characterize the electronic properties and band offsets of these nanowires.
Main Methods:
- Vapor-liquid-solid growth of InAs(1-x)P(x) nanowires.
- High-resolution transmission electron microscopy (HRTEM) for structural analysis.
- Temperature-dependent electrical transport measurements on individual nanowires.
Main Results:
- Achieved growth of InAs(1-x)P(x) nanowires and heterostructures with P concentrations from 22% to 100%.
- Determined wurtzite crystal structure for both InAs and InAs(1-x)P(x) segments.
- Extracted conduction band offset of InAs(1-x)P(x) relative to InAs, yielding linear (0.6 eV) and nonlinear (0.2 eV) coefficients.
- Demonstrated nondegenerate n-type doping and room-temperature field-effect transistor operation in homogeneous InAs(0.8)P(0.2) nanowires.
Conclusions:
- Successfully synthesized InAs(1-x)P(x) nanowires with tunable composition.
- Established a method to determine band offsets in heterostructured nanowires.
- Validated the potential of InAs(1-x)P(x) nanowires for transistor applications.