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Related Experiment Videos

InAs1-xPx nanowires for device engineering.

A I Persson1, M T Björk, S Jeppesen

  • 1Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, S-221 00, Lund, Sweden.

Nano Letters
|March 9, 2006
PubMed
Summary

We grew indium arsenide phosphide (InAs(1-x)P(x)) nanowires and heterostructures, studying phosphorus incorporation. These nanowires exhibit wurtzite structure and function as field-effect transistors.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Indium arsenide phosphide (InAs(1-x)P(x)) nanowires are promising for electronic applications.
  • Controlling composition and structure is key for tuning their properties.

Purpose of the Study:

  • To grow homogeneous InAs(1-x)P(x) nanowires and heterostructures.
  • To investigate the influence of growth parameters on P incorporation.
  • To characterize the electronic properties and band offsets of these nanowires.

Main Methods:

  • Vapor-liquid-solid growth of InAs(1-x)P(x) nanowires.
  • High-resolution transmission electron microscopy (HRTEM) for structural analysis.
  • Temperature-dependent electrical transport measurements on individual nanowires.

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Main Results:

  • Achieved growth of InAs(1-x)P(x) nanowires and heterostructures with P concentrations from 22% to 100%.
  • Determined wurtzite crystal structure for both InAs and InAs(1-x)P(x) segments.
  • Extracted conduction band offset of InAs(1-x)P(x) relative to InAs, yielding linear (0.6 eV) and nonlinear (0.2 eV) coefficients.
  • Demonstrated nondegenerate n-type doping and room-temperature field-effect transistor operation in homogeneous InAs(0.8)P(0.2) nanowires.

Conclusions:

  • Successfully synthesized InAs(1-x)P(x) nanowires with tunable composition.
  • Established a method to determine band offsets in heterostructured nanowires.
  • Validated the potential of InAs(1-x)P(x) nanowires for transistor applications.