A theoretical investigation of hyperpolarizability for small Ga(n)As(m) (n + m = 4-10) clusters

In this paper, the second and third order polarizabilities of small Ga(n)As(m) (n + m=4-10) clusters are systematically investigated using the time dependent density functional theory (TDDFT)6-311+G* combined with the sum-over-states method (SOSTDDFT6-311+G*). For the static second order polarizabilities, the two-level term (beta(vec.2)) makes a significant contribution to the beta(vec) for all considered Ga(n)As(m) clusters except for the Ga3As4 cluster. And, for the static third order polarizabilities, the positive channel (gamma(II)) makes a larger contribution to gamma(tot) than the negative channel (gamma(I)). Similar to the cubic GaAs bulk materials, the small Ga(n)As(m) cluster assembled materials exhibit large second order (1 x 10(-6) esu) and third order susceptibilities (5 x 10(-11) esu). The dynamic behavior of beta(-2omega; omega, omega) and gamma(-3omega; omega, omega, omega) show that the small Ga(n)As(m) cluster will be a good candidate of nonlinear optical materials due to the avoidance of linear resonance photoabsorption.